DocumentCode
1493313
Title
Silicon-on-Insulator Photoconducting Mesas for High-Speed Detection of Laser Speckle Motion
Author
Bessette, Jonathan ; Garmire, Elsa
Author_Institution
Thayer Sch. of Eng., Dartmouth Coll., Hanover, NH, USA
Volume
16
Issue
1
fYear
2010
Firstpage
93
Lastpage
99
Abstract
Silicon-on-insulator (SOI) photoconductor structures show promise in making real-time laser speckle monitoring useful for high-speed applications, such as acoustic and ultrasonic surface vibration detection. For small detection areas below 103 ??m2 and at low optical intensities, the internal gain mechanism of these mesa structures can provide better SNR ratios than similarly sized photodiodes while still operating in the megahertz regime. Small-area detectors, in turn, improve the sensitivity of speckle monitoring systems, suggesting that these simply constructed SOI photoconducting mesas are a good choice of detector element for high-speed speckle monitoring applications.
Keywords
electronic speckle pattern interferometry; measurement by laser beam; optical sensors; photoconducting devices; photodetectors; silicon-on-insulator; internal gain mechanism; laser speckle motion high speed detection; silicon-on-insulator photoconducting mesa; speckle monitoring systems; Laser measurement applications; optical arrays; optical position measurement; optical tracking; optical velocity measurement; photoconducting devices; semiconductor devices; semiconductor–insulator–semiconductor devices; speckle;
fLanguage
English
Journal_Title
Selected Topics in Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
1077-260X
Type
jour
DOI
10.1109/JSTQE.2009.2029871
Filename
5280244
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