• DocumentCode
    1493313
  • Title

    Silicon-on-Insulator Photoconducting Mesas for High-Speed Detection of Laser Speckle Motion

  • Author

    Bessette, Jonathan ; Garmire, Elsa

  • Author_Institution
    Thayer Sch. of Eng., Dartmouth Coll., Hanover, NH, USA
  • Volume
    16
  • Issue
    1
  • fYear
    2010
  • Firstpage
    93
  • Lastpage
    99
  • Abstract
    Silicon-on-insulator (SOI) photoconductor structures show promise in making real-time laser speckle monitoring useful for high-speed applications, such as acoustic and ultrasonic surface vibration detection. For small detection areas below 103 ??m2 and at low optical intensities, the internal gain mechanism of these mesa structures can provide better SNR ratios than similarly sized photodiodes while still operating in the megahertz regime. Small-area detectors, in turn, improve the sensitivity of speckle monitoring systems, suggesting that these simply constructed SOI photoconducting mesas are a good choice of detector element for high-speed speckle monitoring applications.
  • Keywords
    electronic speckle pattern interferometry; measurement by laser beam; optical sensors; photoconducting devices; photodetectors; silicon-on-insulator; internal gain mechanism; laser speckle motion high speed detection; silicon-on-insulator photoconducting mesa; speckle monitoring systems; Laser measurement applications; optical arrays; optical position measurement; optical tracking; optical velocity measurement; photoconducting devices; semiconductor devices; semiconductor–insulator–semiconductor devices; speckle;
  • fLanguage
    English
  • Journal_Title
    Selected Topics in Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    1077-260X
  • Type

    jour

  • DOI
    10.1109/JSTQE.2009.2029871
  • Filename
    5280244