Title :
Characteristics of Traps Induced by Hot Holes Under Negative-Bias Temperature Stress in a pMOSFET
Author :
Jo, Minseok ; Chang, Man ; Kim, Seonghyun ; Jung, Seungjae ; Park, Ju-Bong ; Lee, Joonmyoung ; Seong, Dong-jun ; Hwang, Hyunsang
Author_Institution :
Dept. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
We investigated the generation and recovery process of traps in pMOSFETs under negative-bias temperature (NBT) stress by using pulsed and dc measurements. The behavior of generated traps was studied as a function of applied body bias (V B). The fast components induced with the application of a positive V B were independent of measurement time (t m), while the results from devices with no applied V B showed a strong dependence on t m. This suggests that the fast components of additional traps generated by a positive V B can be attributed to interface states (N it) at the Si/SiO2 interface. Based on the results of recovery characteristics with an intentional measurement delay, the recovery of N it is relatively slow, initiating on the scale of a few milliseconds.
Keywords :
MOSFET; elemental semiconductors; hole traps; interface states; silicon; silicon compounds; Si-SiO2; applied body bias; hot hole traps; interface states; measurement delay; measurement time; negative-bias temperature stress; pMOSFET; Body bias; bulk traps; hot hole; interface states; negative-bias temperature (NBT) stress;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2009.2030772
