High-Temperature Stability of Lasing Wavelength in GaAsSb/GaAs QW Lasers

In this letter, we report the high-temperature stability of a lasing wavelength in GaAsSb/GaAs quantum-well (QW) lasers grown by metal-organic vapor phase epitaxy. To the best of our knowledge, this is the first successful use of triethylgallium (TEGa) as the precursor to grow GaAsSb/GaAs QW at low temperature (525degC). The lasing wavelength ranges from 1117 to 1144 nm and varies with temperature (dlambda/dT) from 0.24 to 0.287 nm/K. These values are lower than those of other results reported previously. The QW grown at high temperature (600degC) using trimethylgallium (TMGa) is also examined. The lasing wavelength is 1125.6 nm at room temperature, and dlambda/dT is 0.36 nm/K; the latter value is higher than those grown at lower temperature.