Title :
A Single-Polarity Piezoresistive Three-Dimensional Stress-Sensing Rosette
Author :
Gharib, H.H. ; Moussa, W.A.
Author_Institution :
Dept. of Mech. Eng., Univ. of Alberta, Edmonton, AB, Canada
fDate :
6/1/2011 12:00:00 AM
Abstract :
This letter presents a study on the feasibility of a new approach for developing a piezoresistive (PR) stress-sensing rosette that is capable of extracting the six stress components with temperature compensation using single-polarity sensing elements (n-type only). Current publicly available PR 3-D stress rosettes extract only four temperature-compensated stresses using a dual-polarity (n- and p-type) rosette. Our proposed approach generates a new set of independent equations based on varying the impurity concentration of the sensing elements and utilizes the distinct properties of the shear PR coefficient (π44) in n-Si. Fabrication of a single-polarity rosette requires less equipment compared to that of a dual-polarity rosette and helps reduce the footprint of the rosette.
Keywords :
compensation; piezoresistive devices; 3D stress rosettes; piezoresistive stress-sensing rosette; single-polarity sensing elements; single-polarity three-dimensional stress-sensing rosette; temperature compensation; Equations; Impurities; Piezoresistance; Silicon; Stress; Temperature sensors; Doping; piezoresistance; piezoresistive (PR) devices; stress sensor; temperature compensation;
Journal_Title :
Microelectromechanical Systems, Journal of
DOI :
10.1109/JMEMS.2011.2127458