Improved Electrical Performance and Uniformity of MILC Poly-Si TFTs Manufactured Using Drive-In Nickel-Induced Lateral Crystallization

Author

Chang, Chih-Pang ; Wu, YewChung Sermon

Author_Institution

Dept. of Mater. Sci. & Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

30

Issue

11

fYear

2009

Firstpage

1176

Lastpage

1178

Abstract

A new manufacturing method for polycrystalline silicon (poly-Si) thin-film transistors (TFTs) using drive-in nickel-induced lateral crystallization (DILC) was proposed. In DILC, a F⁺ implantation was used to drive Ni in the alpha-Si layer. To reduce Ni contamination, the remained Ni film was then removed and subsequently annealed at 590 degC. It was found that DILC TFTs exhibit high field-effect mobility, low threshold voltage, low subthreshold slope, high on-state current, lower trap-state density, smaller standard deviations, and low off-state leakage current compared with conventional Ni-metal-induced lateral crystallization TFTs.

Keywords

annealing; crystallisation; elemental semiconductors; fluorine; ion implantation; leakage currents; nickel; silicon; thin film transistors; F⁺ implantation; MILC poly-Si TFT; Si; alpha-Si layer; annealing; drive-in nickel-induced lateral crystallization; high field-effect mobility; metal-induced lateral crystallization; off-state leakage current; on-state current; polycrystalline silicon; subthreshold slope; temperature 590 degC; thin-film transistors; threshold voltage; trap-state density; Drive-in nickel-induced lateral crystallization (DILC); fluorine ion $(hbox{F}^{+})$ implantation; thin-film transistors (TFTs); uniformity;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2031130

Filename

5280309