Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns

Author

Huang, Hung-Wen ; Lin, Chung-Hsiang ; Huang, Zhi-Kai ; Lee, Kang-Yuan ; Yu, Chang-Chin ; Kuo, Hao-Chung

Author_Institution

Inst. of Electro-Opt. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

30

Issue

11

fYear

2009

Firstpage

1152

Lastpage

1154

Abstract

The enhancement of light extraction from GaN-based light-emitting diodes (LEDs) with a double 12-fold photonic quasi-crystal (PQC) structure using nanoimprint lithography is presented. At a driving current of 20 mA on a transistor-outline-can package, the light output power of an LED with a nanohole patterned sapphire substrate (NHPSS) and an LED with a double PQC structure are enhanced by 34% and 61%, compared with the conventional LED. In addition, the higher output power of the LED with the double PQC structure is due to better reflectance on NHPSS and higher scattering effect on p-GaN surface using a 12-fold PQC structure pattern. These results provide promising potential to increase the output powers of commercial light-emitting devices.

Keywords

III-V semiconductors; gallium compounds; light emitting diodes; photonic crystals; wide band gap semiconductors; GaN; LED; current 20 mA; double photonic quasicrystal patterns; driving current; light output power; light-emitting diodes; nanohole patterned sapphire substrate; nanoimprint lithography; p-GaN surface; scattering effect; transistor-outline-can package; Gallium nitride (GaN); light-emitting diodes (LEDs); nanoimprint lithography (NIL); photonic quasi-crystal (PQC);

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2009.2029985

Filename

5280313