• DocumentCode
    1493785
  • Title

    CMOS Voltage-to-Frequency Converter With Temperature Drift Compensation

  • Author

    Valero, M.R. ; Celma, S. ; Calvo, B. ; Medrano, N.

  • Author_Institution
    Dept. of Electron. Eng. & Commun., Univ. of Zaragoza, Zaragoza, Spain
  • Volume
    60
  • Issue
    9
  • fYear
    2011
  • Firstpage
    3232
  • Lastpage
    3234
  • Abstract
    This paper presents a new complementary metal-oxide-semiconductor (CMOS) differential voltage-to-frequency converter (VFC) suitable for sensor signal conditioning. Designed in a low-cost 0.18- μm CMOS process, the proposed VFC consumes less than 0.4 mW at a 1.8-V supply. For a differential input range of 0-1.2 V, output frequency varies from 0.1 to 1.1 MHz with a linearity error of less than 0.4%. A new temperature compensation technique keeps the gain error below 2.4% over the whole frequency span for a range of -20°C- +120°C.
  • Keywords
    CMOS integrated circuits; compensation; detector circuits; signal conditioning circuits; signal processing equipment; voltage-frequency convertors; CMOS process; complementary metal-oxide-semiconductor; differential voltage-to-frequency converter; power 0.4 mW; power 1.8 W; sensor signal conditioning; size 0.18 mum; temperature -20 C to 120 C; temperature drift compensation; voltage 0 V to 1.2 V; CMOS integrated circuits; Converters; Logic gates; Resistors; Temperature dependence; Temperature sensors; Wireless sensor networks; Analog circuits; complementary metal–oxide–semiconductor (CMOS) analog integrated circuits; integrated circuits; signal processing; voltage–frequency conversion;
  • fLanguage
    English
  • Journal_Title
    Instrumentation and Measurement, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9456
  • Type

    jour

  • DOI
    10.1109/TIM.2011.2128690
  • Filename
    5749695