DocumentCode
1493785
Title
CMOS Voltage-to-Frequency Converter With Temperature Drift Compensation
Author
Valero, M.R. ; Celma, S. ; Calvo, B. ; Medrano, N.
Author_Institution
Dept. of Electron. Eng. & Commun., Univ. of Zaragoza, Zaragoza, Spain
Volume
60
Issue
9
fYear
2011
Firstpage
3232
Lastpage
3234
Abstract
This paper presents a new complementary metal-oxide-semiconductor (CMOS) differential voltage-to-frequency converter (VFC) suitable for sensor signal conditioning. Designed in a low-cost 0.18- μm CMOS process, the proposed VFC consumes less than 0.4 mW at a 1.8-V supply. For a differential input range of 0-1.2 V, output frequency varies from 0.1 to 1.1 MHz with a linearity error of less than 0.4%. A new temperature compensation technique keeps the gain error below 2.4% over the whole frequency span for a range of -20°C- +120°C.
Keywords
CMOS integrated circuits; compensation; detector circuits; signal conditioning circuits; signal processing equipment; voltage-frequency convertors; CMOS process; complementary metal-oxide-semiconductor; differential voltage-to-frequency converter; power 0.4 mW; power 1.8 W; sensor signal conditioning; size 0.18 mum; temperature -20 C to 120 C; temperature drift compensation; voltage 0 V to 1.2 V; CMOS integrated circuits; Converters; Logic gates; Resistors; Temperature dependence; Temperature sensors; Wireless sensor networks; Analog circuits; complementary metal–oxide–semiconductor (CMOS) analog integrated circuits; integrated circuits; signal processing; voltage–frequency conversion;
fLanguage
English
Journal_Title
Instrumentation and Measurement, IEEE Transactions on
Publisher
ieee
ISSN
0018-9456
Type
jour
DOI
10.1109/TIM.2011.2128690
Filename
5749695
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