High-performance low-temperature poly-Si TFTs crystallized by excimer laser irradiation with recessed-channel structure

Author

Lin, Ching-Wei ; Cheng, Li-Jing ; Lu, Yin-Lung ; Lee, Yih-Shing ; Cheng, Huang-Chung

Author_Institution

Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

22

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

269

Lastpage

271

Abstract

High-performance low-temperature poly-Si (LTPS) thin-film transistors (TFTs) have been fabricated by excimer laser crystallization (ELC) with a recessed-channel (RC) structure. The TFTs made by this method possessed large longitudinal grains in the channel regions, therefore, they exhibited better electrical characteristics as compared with the conventional ones. An average field-effect mobility above 300 cm/sup 2//V-s and on/off current ratio higher than 10/sup 9/ were achieved in these RC-structure devices. In addition, since grain growth could be artificially controlled by this method, the device electrical characteristics were less sensitive to laser energy density variation, and therefore the uniformity of device performance could be improved.

Keywords

carrier mobility; elemental semiconductors; grain growth; laser beam annealing; recrystallisation annealing; silicon; thin film transistors; RC-structure devices; Si-SiO/sub 2/; average field-effect mobility; device performance uniformity; electrical characteristics; excimer laser crystallization; grain growth artificial control; high-performance low-temperature polysilicon TFT; large longitudinal grains; on/off current ratio; recessed-channel structure; Amorphous silicon; Annealing; Crystallization; Electric variables; Electrodes; Grain size; Optical control; Pump lasers; Substrates; Thin film transistors;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.924838

Filename

924838