Title :
High-performance low-temperature poly-Si TFTs crystallized by excimer laser irradiation with recessed-channel structure
Author :
Lin, Ching-Wei ; Cheng, Li-Jing ; Lu, Yin-Lung ; Lee, Yih-Shing ; Cheng, Huang-Chung
Author_Institution :
Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
6/1/2001 12:00:00 AM
Abstract :
High-performance low-temperature poly-Si (LTPS) thin-film transistors (TFTs) have been fabricated by excimer laser crystallization (ELC) with a recessed-channel (RC) structure. The TFTs made by this method possessed large longitudinal grains in the channel regions, therefore, they exhibited better electrical characteristics as compared with the conventional ones. An average field-effect mobility above 300 cm/sup 2//V-s and on/off current ratio higher than 10/sup 9/ were achieved in these RC-structure devices. In addition, since grain growth could be artificially controlled by this method, the device electrical characteristics were less sensitive to laser energy density variation, and therefore the uniformity of device performance could be improved.
Keywords :
carrier mobility; elemental semiconductors; grain growth; laser beam annealing; recrystallisation annealing; silicon; thin film transistors; RC-structure devices; Si-SiO/sub 2/; average field-effect mobility; device performance uniformity; electrical characteristics; excimer laser crystallization; grain growth artificial control; high-performance low-temperature polysilicon TFT; large longitudinal grains; on/off current ratio; recessed-channel structure; Amorphous silicon; Annealing; Crystallization; Electric variables; Electrodes; Grain size; Optical control; Pump lasers; Substrates; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
