DocumentCode
1493875
Title
An improved formula for the determination of the polysilicon doping
Author
Spinelli, Alessandro S. ; Pacelli, Andrea ; Lacaita, Andrea L.
Author_Institution
Dipt. di Sci. Chimiche, Fisiche e Matematiche, Insubria Univ., Como, Italy
Volume
22
Issue
6
fYear
2001
fDate
6/1/2001 12:00:00 AM
Firstpage
281
Lastpage
283
Abstract
This letter describes an improved formula for the extraction of the polysilicon doping from the C-V characteristic of MOS transistors. Analytical approximations are presented for the inversion layer contribution, which was neglected in previous work. The new approach returns an estimate error smaller than 10% when the full substrate and poly quantization are accounted for. Practical application to experimental data is also addressed.
Keywords
MOS capacitors; MOSFET; capacitance; doping profiles; elemental semiconductors; inversion layers; silicon; C-V characteristic; MOS capacitor; MOS transistors; Si-SiO/sub 2/; analytical approximations; estimate error; improved formula; inversion layer capacitance; poly quantization; polysilicon doping; Data mining; Degradation; MOS devices; MOSFETs; Quantization; Quantum capacitance; Semiconductor device doping; Semiconductor process modeling; Substrates; Temperature;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/55.924842
Filename
924842
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