Title :
New physics-based analytic approach to the thin-oxide breakdown statistics
Author_Institution :
Dept. d´´Enginyeria Electron., Univ. Autonoma de Barcelona, Spain
fDate :
6/1/2001 12:00:00 AM
Abstract :
A new analytic cell-based approach to the modeling of the oxide breakdown statistics is presented. The new model has the same predictive power as the standard percolation approach and the advantage of providing simple analytic results. The scaling with oxide thickness of the Weibull slope and the mean critical density of defects at breakdown are accounted for correctly.
Keywords :
CMOS integrated circuits; MIS devices; Weibull distribution; dielectric thin films; electric breakdown; integrated circuit reliability; CMOS reliability; Weibull slope; analytic cell-based approach; defect creation; dielectric breakdown; mean critical defect density; modeling; oxide reliability; physics-based analytic approach; thin-oxide breakdown statistics; ultrathin gate oxide; Atomic force microscopy; Dielectric breakdown; Electric breakdown; Equations; Helium; MOS devices; Predictive models; Statistical analysis; Statistical distributions; Switches;
Journal_Title :
Electron Device Letters, IEEE
