An on-chip temperature sensor by utilizing a MOS tunneling diode

Author

Shih, Yen-Hao ; Hwu, Jenn-Gwo

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

Volume

22

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

299

Lastpage

301

Abstract

A simple metal-oxide-semiconductor (MOS) tunneling diode was demonstrated for application to an integrated temperature sensor. The MOS diode equipped with a 21-/spl Aring/ oxide was biased inversely at 1.8 V to monitor its substrate temperature through gate current. The gate current increased more than 700 times when the diode was heated from 20 to 110/spl deg/C. An exponential fitting curve correlated the gate current and the substrate temperature. Moreover, characteristics of the diode were analyzed though C-V and I/sub 1.8 V/-n/sub i/ curves. The good temperature response of the MOS tunneling diode might be useful in self-diagnosis or self-protection IC applications.

Keywords

MIS devices; electric sensing devices; protection; temperature sensors; tunnel diodes; 1.8 V; 20 to 110 C; 21 angstrom; C-V characteristics; MOS tunneling diode; Si-SiO/sub 2/; exponential fitting curve; gate current; integrated temperature sensor; inverse bias; on-chip temperature sensor; self-diagnosis IC applications; self-protection IC applications; substrate temperature; CMOS technology; Lithography; Rapid thermal processing; Semiconductor diodes; Silicon; Substrates; Temperature sensors; Thermal sensors; Transistors; Tunneling;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.924848

Filename

924848