DocumentCode :
1493929
Title :
Dielectric constant of evaporated SiO at frequencies between 13 and 103 GHz
Author :
Olsson, H.K.
Author_Institution :
Dept. of Phys., Chalmers Univ. of Technol., Goteborg, Sweden
Volume :
25
Issue :
2
fYear :
1989
fDate :
3/1/1989 12:00:00 AM
Firstpage :
1115
Lastpage :
1118
Abstract :
An integrated Josephson tunnel junction and microstrip resonator have been used to determine the dielectric constant of evaporated SiO. The method is straightforward in that it uses conventional microwave techniques to calculate the impedances for different frequencies and parasitic effects are negligible. A frequency-independent value of 5.5±0.4 was calculated for the 13- to 103-GHz range. At each resonant frequency a step appeared at the corresponding voltage in the current-voltage curve. For each resonant frequency, a dielectric constant was calculated. The constant does not change appreciably from the average value of 5.5 throughout the whole frequency range, in agreement with previous measurements
Keywords :
Josephson effect; dielectric thin films; microwave measurement; permittivity measurement; silicon compounds; vacuum deposited coatings; 13 to 103 GHz; EHF; Josephson tunnel junction; SHF; current-voltage curve; dielectric constant; evaporated SiO; impedances; microstrip resonator; microwave techniques; millimetre wave frequencies; permittivity; resonant frequency; thin film dielectrics; Dielectric constant; Dielectric measurements; Dielectric thin films; Distributed parameter circuits; Impedance; Microstrip; Power transmission lines; Resonance; Resonant frequency; Superconducting transmission lines;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/20.92485
Filename :
92485
Link To Document :
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