• DocumentCode
    1493987
  • Title

    A design for high-speed low-power CMOS fully parallel content-addressable memory macros

  • Author

    Miyatake, Hisatada ; Tanaka, Masahiro ; Mori, Yotaro

  • Author_Institution
    Yasu Technol. Applic. Lab., IBM Japan Ltd., Tokyo, Japan
  • Volume
    36
  • Issue
    6
  • fYear
    2001
  • fDate
    6/1/2001 12:00:00 AM
  • Firstpage
    956
  • Lastpage
    968
  • Abstract
    Described is a design for high-speed low-power-consumption fully parallel content-addressable memory (CAM) macros for CMOS ASIC applications. The design supports configurations ranging from 64 words by 8 bits to 2048 words by 64 bits and achieves around 7.5-ns search access times in CAM macros on a 0.35-μm 3.3-V standard CMOS ASIC technology. A new CAM cell with a pMOS match-line driver reduces search rush current and power consumption, allowing a NOR-type match-line structure suitable for high-speed search operations. It is also shown that the CAM cell has other advantages that lead to a simple high-speed current-saving architecture. A small signal on the match line is detected by a single-ended sense amplifier which has both high-speed and low-power characteristics and a latch function. The same type of sense amplifier is used for a fast read operation, realizing 5-ns access time under typical conditions. For further current savings in search operations, the precharging of the match line is controlled based on the valid bit status. Also, a dual bit switch with optimized size and control reduces the current. CAM macros of 256×54 configuration on test chips showed 7.3-ns search access time with a power-performance metric of 131 fJ/bit/search under typical conditions
  • Keywords
    CMOS memory circuits; application specific integrated circuits; content-addressable storage; high-speed integrated circuits; integrated circuit design; low-power electronics; parallel memories; 0.35 micron; 3.3 V; 5 to 7.5 ns; CAM cell; CMOS ASIC applications; CMOS fully parallel CAM; NOR-type match-line structure; associative memory; content-addressable memory macros; dual bit switch; fast read operation; high-speed CAM; high-speed current-saving architecture; high-speed search operations; latch function; low-power CAM; match line precharging; pMOS match-line driver; single-ended sense amplifier; valid bit status; Application specific integrated circuits; CADCAM; CMOS technology; Computer aided manufacturing; Driver circuits; Energy consumption; Operational amplifiers; Size control; Switches; Testing;
  • fLanguage
    English
  • Journal_Title
    Solid-State Circuits, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9200
  • Type

    jour

  • DOI
    10.1109/4.924858
  • Filename
    924858