Extraction of AlGaN/GaN HEMT Gauge Factor in the Presence of Traps

Author

Koehler, Andrew D. ; Gupta, Amit ; Chu, Min ; Parthasarathy, Srivatsan ; Linthicum, Kevin J. ; Johnson, J. Wayne ; Nishida, Toshikazu ; Thompson, Scott E.

Author_Institution

Dept. of Electr. Eng., Univ. of Florida, Gainesville, FL, USA

Volume

31

Issue

7

fYear

2010

fDate

7/1/2010 12:00:00 AM

Firstpage

665

Lastpage

667

Abstract

Repeatable gauge factors (GFs) of an AlGaN/GaN high-electron mobility transistor (HEMT) device were obtained after eliminating parasitic charge-trapping effects. Many GFs for AlGaN/GaN HEMTs are reported in the literature, and charge traps could be responsible for the four orders of magnitude variation in reported GFs. By employing continuous subbandgap optical excitation, the effect of nonrepeatable charge-trapping transients was effectively minimized, allowing the GF to be accurately measured. The measured GF (-2.8 0.4) is reasonably close to the simulated GF (-7.9 5.2) calculated from stress-induced changes in the 2-DEG sheet carrier density and mobility.

Keywords

III-V semiconductors; aluminium compounds; carrier mobility; electron traps; gallium compounds; high electron mobility transistors; 2-DEG sheet carrier density; AlGaN-GaN; HEMT gauge factor; carrier mobility; high-electron mobility transistor; magnitude variation; parasitic charge-trapping effect; subbandgap optical excitation; GaN high-electron mobility transistor (HEMT); gauge factor (GF); piezoresistance; wafer bending;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2010.2048195

Filename

5466234