DocumentCode :
1494200
Title :
Optimized Porous Si Microplate Technology for On-Chip Local RF Isolation
Author :
Zacharatos, Filimon ; Contopanagos, Harry F. ; Nassiopoulou, Androula G.
Author_Institution :
IMEL/NCSR Demokritos, Terma Patriarchou Grigoriou, Athens, Greece
Volume :
56
Issue :
11
fYear :
2009
Firstpage :
2733
Lastpage :
2738
Abstract :
In this paper, we present an optimized porous Si (PS) microplate technology for use as a local substrate for the on-chip integration of RF passives. The substrate used is a heavily doped p-type Si wafer with a resistivity of 0.005 Omegamiddotcm, which shows similar RF response to the p/p+ epiwafers, commonly used by complementary metal-oxide-semiconductor industry. Broadband electrical characterization of the microplates in the frequency range from dc up to 20 GHz was performed by integrating on them coplanar waveguides and using them to characterize RF losses in the composite PS/Si substrate material. We show that the porous material has a complex permittivity epsiv = 3.05(1 + i0.029), which is much superior to that obtained by the authors for PS grown on a p-type substrate. The effect of the thickness of the PS membrane on the RF isolation was also examined.
Keywords :
CMOS integrated circuits; coplanar waveguides; complementary metal-oxide-semiconductor industry; coplanar waveguides; on-chip local RF isolation; optimized porous microplate technology; Biomembranes; Conductivity; Coplanar waveguides; Dielectric losses; Dielectric substrates; Inductors; Isolation technology; Mesoporous materials; Permittivity; Radio frequency; CMOS on-chip inductors; high Q passives on Si; porous Si RF isolation; porous Si RF microplate technology;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2009.2030952
Filename :
5280383
Link To Document :
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