Title :
High-Performance Drain-Offset a-IGZO Thin-Film Transistors
Author :
Mativenga, Mallory ; Choi, Min Hyuk ; Kang, Dong Han ; Jang, Jin
Author_Institution :
Kyung Hee Univ., Seoul, South Korea
fDate :
5/1/2011 12:00:00 AM
Abstract :
We report the effect of the drain-offset length on the performance of amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). While the field-effect mobility decreases from ~ 40 to 10 cm2/V·s by increasing the drain-offset length from 0 to 5 μm, the threshold voltage (Vth) and swing (S) remain relatively independent of the offset length variation. Because of its high mobility even for large (5 μm ) offset lengths, the drain-offset a-IGZO TFT can be used to eliminate the kickback voltage in active-matrix displays.
Keywords :
amorphous semiconductors; carrier mobility; field effect transistors; flexible displays; gallium compounds; indium compounds; thin film transistors; wide band gap semiconductors; InGaZnO; TFT; a-IGZO; active-matrix display; amorphous-indium-gallium-zinc-oxide; drain-offset length; field-effect mobility; high-performance drain-offset; kickback voltage elimination; size 0 mum to 5 mum; thin film transistor; threshold voltage; Capacitance; Lighting; Logic gates; Metals; Pixel; Thin film transistors; Amorphous indium–gallium–zinc–oxide (a -IGZO); gate–source capacitance $(C_{rm gd})$ ; kickback voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2011.2119290
