Characteristics of vertically-stacked planar tunnel junction structures

Author

Blamire, M.G. ; Somekh, R.E. ; Morris, G.W. ; Evetts, J.E.

Author_Institution

Dept. of Mater. Sci. & Metall., Cambridge Univ., UK

Volume

25

Issue

2

fYear

1989

fDate

3/1/1989 12:00:00 AM

Firstpage

1135

Lastpage

1138

Abstract

Whole-wafer multilayer tunnel structures consisting of vertically stacked Al₂O₃ tunnel barriers separated by thin Nb layers have been deposited under UHV (ultrahigh vacuum) conditions, with repeat distances ranging from 10-50 nm. Using a modification of the conventional SNEP process, these structures have been fabricated into vertical series arrays. Using this technique it is possible to select different numbers of junctions on the same substrate and so determine the properties of each barrier. Information gained from such structures provides a considerable insight into the factors determining junction characteristics such as critical current density and quality as well as serving as the basis for the study of novel types of structures and devices

Keywords

critical current density (superconductivity); integrated circuit technology; superconducting junction devices; superconductive tunnelling; Al₂O₃ tunnel barriers; Nb-Al₂O₃; SNEP process; critical current density; junction characteristics; planar tunnel junction structures; quality; superconducting junctions; ultrahigh vacuum; vertical series arrays; vertically-stacked; whole wafer process; Critical current density; Electronic circuits; Etching; Fabrication; Materials science and technology; Mechanical factors; Niobium; Nonhomogeneous media; Plasma temperature; Superconducting epitaxial layers;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.92489

Filename

92489