DocumentCode
1494356
Title
Transistor mismatch in 32 nm high-k metal-gate process
Author
Yuan, Xibo ; Shimizu, Tsuyoshi ; Mahalingam, U. ; Brown, J.S. ; Habib, Kareem ; Tekleab, D.G. ; Su, T.-C. ; Satadru, S. ; Olsen, C.M. ; Lee, Hongseok ; Pan, Li-Hong ; Hook, T.B. ; Han, J.-P. ; Park, Jun-Eun ; Na, M.-H. ; Rim, Ken
Author_Institution
Microelectron. Div., IBM, Hopewell Junction, NY, USA
Volume
46
Issue
10
fYear
2010
Firstpage
708
Lastpage
709
Abstract
Transistor mismatch data and analysis from state-of-the-art high-k/metal-gate (HKMG) technology are presented. By normalising mismatch data against oxide thickness (TINV), threshold voltage (VTH), and effective work function, direct comparison of VTH mismatch from various device types is made. It is quantitatively demonstrated that effective work function variation (EWFV) does not generate significant VTH variability in the present HKMG technology.
Keywords
field effect transistors; HKMG technology; effective work function variation; high-k metal-gate process; mismatch data; oxide thickness; size 32 nm; threshold voltage; transistor mismatch;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el.2010.0343
Filename
5466357
Link To Document