Title :
A vertical resonant tunneling transistor for application in digital logic circuits
Author :
Stock, Jürgen ; Malindretos, Jörg ; Indlekofer, Klaus Michael ; Pöttgens, Michael ; Förster, Arno ; Lüth, Hans
Author_Institution :
Inst. of Thin Film & Interfaces, Res. Center Julich GmbH, Julich, Germany
fDate :
6/1/2001 12:00:00 AM
Abstract :
A vertical resonant tunneling transistor (VRTT) has been developed, its properties and its application in digital logic circuits based on the monostable-bistable transition logic element (MOBILE) principle are described. The device consists of a small mesa resonant tunneling diode (RTD) in the GaAs/AlAs material system surrounded by a Schottky gate. We obtain low peak voltages using InGaAs in the quantum well and the devices show an excellent peak current control by means of an applied gate voltage. A self latching inverter circuit has been fabricated using two VRTTs and the switching functionality was demonstrated at low frequencies
Keywords :
III-V semiconductors; aluminium compounds; field effect logic circuits; gallium arsenide; logic gates; resonant tunnelling transistors; GaAs-AlAs; Schottky gate; VRTTs; applied gate voltage; digital logic circuits; low peak voltages; monostable-bistable transition logic element; peak current control; quantum well; resonant tunneling diode; self latching inverter circuit; switching functionality; vertical resonant tunneling transistor; Current control; Gallium arsenide; Indium gallium arsenide; Inverters; Logic circuits; Logic devices; Low voltage; Resonant tunneling devices; Schottky diodes; Switching circuits;
Journal_Title :
Electron Devices, IEEE Transactions on
