Title :
On the multiple negative-differential-resistance (MNDR) InGaP-GaAs resonant tunneling bipolar transistors
Author :
Liu, Wen-Chau ; Pan, Hsi-jen ; Wang, Wei-Chou ; Feng, Shun-Ching ; Lin, Kun-Wei ; Yu, Kuo-Hui ; Laih, Lih-Wen
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
6/1/2001 12:00:00 AM
Abstract :
Two InGaP/GaAs resonant tunneling bipolar transistors (RTBTs) with different superlattice (SL) structures in the emitters are fabricated and studied. The uniform and modulated widths of barriers are respectively utilized in the specific SL structures. Based on the calculations, the ground state and first excited state minibands are estimated from the transmission probability. The electron transport of RT through SL structures is significantly determined by the electric field behaviors across the barriers. Experimentally, the excellent transistor characteristics including the small saturation voltage, small offset voltage and high breakdown voltages are obtained due to the insertion of δ-doping sheet at the base-collector (B-C) heterointerface. Furthermore, at higher current regimes, the double- and quaternary-negative difference resistance (NDR) phenomena are observed in agreement with the theoretical prediction at 300 K
Keywords :
III-V semiconductors; doping profiles; gallium arsenide; heterojunction bipolar transistors; indium compounds; negative resistance devices; resonant tunnelling transistors; semiconductor device breakdown; semiconductor superlattices; δ-doping sheet; 300 K; InGaP-GaAs; breakdown voltages; current regimes; double-negative difference resistance; electric field behaviors; first excited state minibands; ground state minibands; modulated widths; multiple negative-differential-resistance devices; offset voltage; quaternary-negative difference resistance; resonant tunneling bipolar transistors; saturation voltage; transistor characteristics; transmission probability; Bipolar transistors; Breakdown voltage; Electric resistance; Electrons; Gallium arsenide; Probability; Resonant tunneling devices; State estimation; Stationary state; Superlattices;
Journal_Title :
Electron Devices, IEEE Transactions on
