Effects of current spreading on the performance of GaN-based light-emitting diodes

Author

Kim, Hyunsoo ; Park, Seong-Ju ; Hwang, Hyunsang

Author_Institution

Dept. of Mater. Sci. & Eng., Kwangju Inst. of Sci. & Technol., South Korea

Volume

48

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

1065

Lastpage

1069

Abstract

Effects of current spreading on the performance of multiple quantum well (MQW) GaN/InGaN light-emitting diodes (LEDs) were investigated. For the theoretical prediction of device performance, we developed a model using two device-design parameters, which consist of the applied current density and the effective length for the lateral current path. A comparison of the theoretical and experimental results clearly showed that the reliability characteristics and the optical efficiency of device are heavily dependent on the applied current density. In addition, the effective length for the lateral current path was found to have a profound effect on the uniform current spreading. Based on these findings, an ideal geometrical design of the highly efficient LED is proposed

Keywords

III-V semiconductors; current density; gallium compounds; indium compounds; light emitting diodes; quantum well devices; semiconductor device reliability; GaN-InGaN; applied current density; device performance; device-design parameters; ideal geometrical design; lateral current path; light-emitting diodes; model; optical efficiency; reliability characteristics; uniform current spreading; Conductivity; Current density; Gallium nitride; Light emitting diodes; Optical devices; Optical materials; Predictive models; Quantum well devices; Reliability theory; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.925227

Filename

925227