DocumentCode :
1494598
Title :
Silicon-germanium
Author :
Krol, Ed
Author_Institution :
Loyola Marymount Univ., Los Angeles, CA, USA
Volume :
18
Issue :
2
fYear :
1999
Firstpage :
17
Lastpage :
19
Abstract :
The strong points of compound and single element semiconductors are united in a new type of transistor, silicon-germanium heterojunction bipolar transistor (Si-Ge HBT). The device is the offshoot of bandgap engineering and the manufacturing economics of silicon. Silicon-germanium is a new material used in making microchips for less expensive, high-performance communications tools. Low energy consumption and processing at ultra-high speeds make silicon-germanium transistors a treasure for many people in microelectronics. Silicon-germanium is a critical breakthrough in an anxiety-laden field. Practitioners fear that traditional silicon technology is nearing its physical limits. Higher speeds cannot be attained without miniaturization to a point at which the devices no longer function
Keywords :
Ge-Si alloys; energy gap; heterojunction bipolar transistors; semiconductor materials; semiconductor technology; SiGe; bandgap engineering; energy consumption; heterojunction bipolar transistor; physical limits; ultra-high speeds; Analog-digital conversion; Atomic layer deposition; Bipolar transistors; Electrons; FETs; Germanium silicon alloys; Research and development; Semiconductivity; Silicon germanium; Switches;
fLanguage :
English
Journal_Title :
Potentials, IEEE
Publisher :
ieee
ISSN :
0278-6648
Type :
jour
DOI :
10.1109/45.755847
Filename :
755847
Link To Document :
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