• DocumentCode
    1494598
  • Title

    Silicon-germanium

  • Author

    Krol, Ed

  • Author_Institution
    Loyola Marymount Univ., Los Angeles, CA, USA
  • Volume
    18
  • Issue
    2
  • fYear
    1999
  • Firstpage
    17
  • Lastpage
    19
  • Abstract
    The strong points of compound and single element semiconductors are united in a new type of transistor, silicon-germanium heterojunction bipolar transistor (Si-Ge HBT). The device is the offshoot of bandgap engineering and the manufacturing economics of silicon. Silicon-germanium is a new material used in making microchips for less expensive, high-performance communications tools. Low energy consumption and processing at ultra-high speeds make silicon-germanium transistors a treasure for many people in microelectronics. Silicon-germanium is a critical breakthrough in an anxiety-laden field. Practitioners fear that traditional silicon technology is nearing its physical limits. Higher speeds cannot be attained without miniaturization to a point at which the devices no longer function
  • Keywords
    Ge-Si alloys; energy gap; heterojunction bipolar transistors; semiconductor materials; semiconductor technology; SiGe; bandgap engineering; energy consumption; heterojunction bipolar transistor; physical limits; ultra-high speeds; Analog-digital conversion; Atomic layer deposition; Bipolar transistors; Electrons; FETs; Germanium silicon alloys; Research and development; Semiconductivity; Silicon germanium; Switches;
  • fLanguage
    English
  • Journal_Title
    Potentials, IEEE
  • Publisher
    ieee
  • ISSN
    0278-6648
  • Type

    jour

  • DOI
    10.1109/45.755847
  • Filename
    755847