DocumentCode
1494598
Title
Silicon-germanium
Author
Krol, Ed
Author_Institution
Loyola Marymount Univ., Los Angeles, CA, USA
Volume
18
Issue
2
fYear
1999
Firstpage
17
Lastpage
19
Abstract
The strong points of compound and single element semiconductors are united in a new type of transistor, silicon-germanium heterojunction bipolar transistor (Si-Ge HBT). The device is the offshoot of bandgap engineering and the manufacturing economics of silicon. Silicon-germanium is a new material used in making microchips for less expensive, high-performance communications tools. Low energy consumption and processing at ultra-high speeds make silicon-germanium transistors a treasure for many people in microelectronics. Silicon-germanium is a critical breakthrough in an anxiety-laden field. Practitioners fear that traditional silicon technology is nearing its physical limits. Higher speeds cannot be attained without miniaturization to a point at which the devices no longer function
Keywords
Ge-Si alloys; energy gap; heterojunction bipolar transistors; semiconductor materials; semiconductor technology; SiGe; bandgap engineering; energy consumption; heterojunction bipolar transistor; physical limits; ultra-high speeds; Analog-digital conversion; Atomic layer deposition; Bipolar transistors; Electrons; FETs; Germanium silicon alloys; Research and development; Semiconductivity; Silicon germanium; Switches;
fLanguage
English
Journal_Title
Potentials, IEEE
Publisher
ieee
ISSN
0278-6648
Type
jour
DOI
10.1109/45.755847
Filename
755847
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