Title :
Characteristics of low-temperature poly-Si TFTs on Al/glass substrates
Author :
Mishima, Yasuyoshi ; Yoshino, Kenichi ; Takei, Michiko ; Sasaki, Nobuo
Author_Institution :
LCD Lab., Fujitsu Labs. Ltd., Atsugi, Japan
fDate :
6/1/2001 12:00:00 AM
Abstract :
The low-temperature poly-Si TFTs described here were fabricated on the Al/glass substrates by anodic oxidation of Al. An Al layer on glass substrates can be used to control threshold voltage, improve stabilities, and suppress the temperature rise due to self-heating. The Al layer on glass, thus assuring the improved reliability of displays, using this type of TFT, effectively suppressed the self-heating effect of poly-Si TFTs on glass. The threshold voltage of a TFT with an Al layer was more stable than that without an Al layer. These results were supported by numerical analysis
Keywords :
anodisation; elemental semiconductors; light valves; liquid crystal displays; semiconductor device breakdown; semiconductor device reliability; silicon; thin film transistors; anodic oxidation; low-temperature polysilicon TFTs; reliability; self-heating effect; temperature rise; threshold voltage; Annealing; Glass; Oxidation; Plasma temperature; Plastics; Substrates; Temperature control; Thermal conductivity; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
