High-performance p-i-n Ge on Si photodetectors for the near infrared: from model to demonstration

Author

Masini, Gianlorenzo ; Calace, L. ; Assanto, Gaetano ; Luan, Hsin-Chiao ; Kimerling, Lionel C.

Author_Institution

Dipartimento di Elettron. Eng., Rome Univ., Italy

Volume

48

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

1092

Lastpage

1096

Abstract

We have investigated the integration of Ge p-i-n and n-i-p heterojunction photodiodes on Si. Recognizing the crucial role of interface defects at the Ge-Si interface on the performance of photodetectors, we have designed and fabricated high-performance n-i-p Ge photodiodes on p⁺-Si substrates. These photodiodes exhibit short-circuit responsivities of 0.3 and 0.2 A/W at 1.3 and 1.55 μm, respectively, reverse dark currents of 20 mA/cm² and response times of 800 ps

Keywords

elemental semiconductors; germanium; infrared detectors; integrated optoelectronics; optical receivers; p-i-n photodiodes; photodetectors; silicon; 1.3 micron; 1.55 micron; 800 ps; Ge on Si photodetectors; Ge-Si; Ge/Si interface; Si; high-performance photodetectors; interface defects; n-i-p heterojunction photodiodes; near IR detectors; near infrared detectors; p-i-n heterojunction photodiodes; p⁺-Si substrates; CMOS technology; Germanium silicon alloys; Heterojunctions; III-V semiconductor materials; Optical fiber communication; PIN photodiodes; Photodetectors; Photonic band gap; Silicon alloys; Silicon germanium;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.925232

Filename

925232