Low-frequency noise of integrated polysilicon resistors

Author

Brederlow, Ralf ; Weber, Werner ; Dahl, Claus ; Schmitt-Landsiedel, Doris ; Thewes, Roland

Author_Institution

Infineon Technol. AG, Munich, Germany

Volume

48

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

1180

Lastpage

1187

Abstract

This paper presents an analytical first principle model for the low-frequency noise current of polysilicon layers used as resistors in analog CMOS applications. The observed noise is much higher than predicted by the models mostly used in circuit simulation. The dependence on specific processing parameters such as doping or deposition techniques are investigated and explained. The model is confirmed by measurement of deviations in the flicker noise behavior of small size resistors. Guidelines for analog circuit design and a noise model for circuit simulation are presented

Keywords

CMOS analogue integrated circuits; circuit simulation; doping profiles; elemental semiconductors; flicker noise; integrated circuit design; integrated circuit modelling; integrated circuit noise; silicon; Si; analog CMOS applications; analog circuit design; analytical first principle model; circuit simulation; deposition techniques; doping; flicker noise behavior; integrated polysilicon resistors; low-frequency noise current; noise model; small size resistors; 1f noise; Analytical models; Circuit simulation; Doping; Low-frequency noise; Noise measurement; Predictive models; Resistors; Semiconductor device modeling; Semiconductor process modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.925245

Filename

925245