On the iterative schemes to obtain base doping profiles for reducing base transit time in a bipolar transistor

This paper shows that base doping profiles obtained using any iterative scheme for reducing the base transit time τ_b in bipolar transistors for a given neutral base width must take into account the heavy doping effects implicitly. Comparing our results with those reported earlier, we demonstrate that if the heavy doping effects are not implicitly included in the iterative scheme it will result in a completely different base doping profile leading to an overestimation of base transit time and underestimation of base resistance