Title :
Low-Noise, High-Gain Transimpedance Amplifier Integrated With SiAPD for Low-Intensity Near-Infrared Light Detection
Author :
Kamrani, Ehsan ; Lesage, Frederic ; Sawan, Mohamad
Author_Institution :
Electr. Eng. Dept., Polytech. Montreal, Montreal, QC, Canada
Abstract :
A fully integrated near-infrared spectroscopy photoreceiver including two new silicon avalanche photodiodes (SiAPDs) and a new transimpedance amplifier (TIA) is proposed in this paper. SiAPDs are designed in p+/n-well structure with guard-rings realized in different shapes. The TIA front-end has been designed using distributed-gain concept combined with resistive-feedback and common-gate topology to reach low-noise, low-power consumption, high gain-bandwidth product characteristics and it is robust against power-supply variation (1-3 V). This circuit is developed using 0.35 μm CMOS technology and the measurement results are compared with other results from the literature. The designed rectangular and octagonal SiAPDs have the avalanche gain of 100 and 45 with the breakdown voltage of 9 and 6 V and the photon absorption efficiency of 45% and 25% at 800 nm. Fabricated TIA offers high-transimpedance gain (up to 250 MV/A), tunable BW (1 kHz-1 GHz), extremely low input and output noises (100 fA/√Hz, 1.8 μV/√Hz), and low-power consumption (0.8 mW). The impact and effects of on-chip integration of SiAPD and TIA front-end have been also measured and evaluated.
Keywords :
CMOS analogue integrated circuits; UHF amplifiers; UHF detectors; UHF integrated circuits; avalanche breakdown; avalanche photodiodes; elemental semiconductors; feedback amplifiers; infrared detectors; integrated circuit design; integrated circuit measurement; integrated circuit noise; operational amplifiers; photodetectors; silicon; CMOS technology; Si; TIA; bandwidth 1 kHz to 1 GHz; breakdown voltage; common-gate topology; distributed-gain concept; efficiency 25 percent; efficiency 4 percent; fully integrated near-infrared spectroscopy photoreceiver; guard-ring; high gain-bandwidth product characteristics; low-intensity near-infrared light detection; low-noise high-gain transimpedance amplifier; low-power consumption; octagonal SiAPD design; p+-n-well structure; photon absorption efficiency; power 0.8 mW; rectangular SiAPD design; resistive-feedback; silicon avalanche photodiode; size 0.35 mum; size 800 nm; voltage 1 V to 3 V; voltage 6 V; voltage 9 V; CMOS integrated circuits; CMOS technology; Electric breakdown; Noise; Photodetectors; Sensitivity; Standards; Avalanche photodiode; CMOS photoreceiver; fNIRS; medical imaging; transimpedance amplifier;
Journal_Title :
Sensors Journal, IEEE
DOI :
10.1109/JSEN.2013.2282624
