Simulation of power heterojunction bipolar transistors on gallium arsenide

Author

Palankovski, Vassil ; Schultheis, Ruediger ; Selberherr, Siegfried

Author_Institution

Inst. fur Mikroelectron., Tech. Univ. Wien, Austria

Volume

48

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

1264

Lastpage

1269

Abstract

We demonstrate the results of two-dimensional (2-D) hydrodynamic simulations of one-finger power heterojunction bipolar transistors (HBTs) on GaAs. An overview of the physical models used and comparisons with experimental data are given. We present models for the thermal conductivity and the specific heat applicable to all relevant diamond and zinc-blende structure semiconductors. They are expressed as functions of the lattice temperature and in the case of semiconductor alloys, of the material composition

Keywords

III-V semiconductors; gallium arsenide; heterojunction bipolar transistors; power bipolar transistors; semiconductor device models; specific heat; thermal conductivity; 2D hydrodynamic simulations; GaAs; lattice temperature; material composition; one-finger power heterojunction bipolar transistors; physical models; specific heat; thermal conductivity; Composite materials; Gallium arsenide; Heterojunction bipolar transistors; Hydrodynamics; III-V semiconductor materials; Lattices; Semiconductor materials; Temperature; Thermal conductivity; Two dimensional displays;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.925258

Filename

925258