A trap generation closed-form statistical model for intrinsic oxide breakdown

Author

Huang, Huan-Tsung ; Chen, Ming-Jer ; Su, Chi-Wen ; Chen, Jyh-Huei ; Hou, Chin-Shan ; Liang, Mong-Song

Author_Institution

Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan

Volume

48

Issue

6

fYear

2001

fDate

6/1/2001 12:00:00 AM

Firstpage

1275

Lastpage

1277

Abstract

A trap generation statistical model with the trap sphere radius r as parameter has been newly formulated in closed-form for intrinsic breakdown of ultrathin oxides and, by incorporating the trap filling fraction p as the secondary parameter, can be practically useful in a manufacturing process. Experimental reproduction for different oxide thicknesses and areas has been achieved through the model. A certain criterion has readily been drawn from the model, with which the ultimate thickness limit for breakdown can be set

Keywords

MOS capacitors; Monte Carlo methods; electron traps; insulating thin films; percolation; semiconductor device breakdown; intrinsic oxide breakdown; secondary parameter; trap filling fraction; trap generation closed-form statistical model; trap sphere radius; ultimate thickness limit; ultrathin oxides; Chemicals; Couplings; Electric breakdown; Electron traps; Filling; Lead compounds; Manufacturing processes; Monte Carlo methods; Predictive models; Statistics;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.925260

Filename

925260