Title :
A trap generation closed-form statistical model for intrinsic oxide breakdown
Author :
Huang, Huan-Tsung ; Chen, Ming-Jer ; Su, Chi-Wen ; Chen, Jyh-Huei ; Hou, Chin-Shan ; Liang, Mong-Song
Author_Institution :
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
fDate :
6/1/2001 12:00:00 AM
Abstract :
A trap generation statistical model with the trap sphere radius r as parameter has been newly formulated in closed-form for intrinsic breakdown of ultrathin oxides and, by incorporating the trap filling fraction p as the secondary parameter, can be practically useful in a manufacturing process. Experimental reproduction for different oxide thicknesses and areas has been achieved through the model. A certain criterion has readily been drawn from the model, with which the ultimate thickness limit for breakdown can be set
Keywords :
MOS capacitors; Monte Carlo methods; electron traps; insulating thin films; percolation; semiconductor device breakdown; intrinsic oxide breakdown; secondary parameter; trap filling fraction; trap generation closed-form statistical model; trap sphere radius; ultimate thickness limit; ultrathin oxides; Chemicals; Couplings; Electric breakdown; Electron traps; Filling; Lead compounds; Manufacturing processes; Monte Carlo methods; Predictive models; Statistics;
Journal_Title :
Electron Devices, IEEE Transactions on
