Title :
Impact of N2O activation treatment on junction characteristics of p+/n junctions formed by a solid diffusion source
Author :
Yang, Wen Luh ; Liu, Don-Gey ; Chu, Kuo Wei
Author_Institution :
Dept. of Electr. Eng., Feng Chia Univ., Taichung, Taiwan
fDate :
6/1/2001 12:00:00 AM
Abstract :
The authors have investigated p+/n junctions formed by a solid-boron-source under different activation ambient gases. It was found that the junction depth strongly depends on the activation ambient gas and the corresponding flow rate. Especially in the N2O ambient, the diffusion of boron is enormously enhanced. Furthermore, the thermal stability of CoSi2 is profoundly improved by the N 2O treatment during activation
Keywords :
boron; diffusion; doping profiles; nitrogen compounds; p-n junctions; secondary ion mass spectra; silicon; B profiles; CoSi2; N2O; N2O activation treatment; N2O ambient; Si:B; activation ambient gases; gas flow rate; junction characteristics; junction depth; p+/n junctions; solid B source; solid diffusion source; thermal stability; Annealing; Bonding; Boron; Doping; Gases; Germanium silicon alloys; Silicides; Silicon germanium; Temperature; Thermal stability;
Journal_Title :
Electron Devices, IEEE Transactions on
