Title :
Eleven-bit parity generator with a single, vertically integrated resonant tunnelling device
Author :
Lakhani, A.A. ; Potter, Robert C.
Author_Institution :
Applied Signal Aerosp. Co., Columbia, MD
fDate :
5/26/1988 12:00:00 AM
Abstract :
A vertically integrated diode (VID) with five negative differential resistance regions has been developed by stacking five resonant tunnelling structures. This device can be used for processing both analogue and digital signals. An 11-bit parity checker was demonstrated using the VID. In this approach, a single device replaced a large number of exclusive-OR gates in a conventional parity checker
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated logic circuits; monolithic integrated circuits; tunnel diodes; AlInAs-GaInAs; eleven-bit parity generator; exclusive-OR gates; negative differential resistance regions; parity checker; single device; vertically integrated diode; vertically integrated resonant tunnelling device;
Journal_Title :
Electronics Letters
