Title :
A double-heterojunction doped-channel pseudomorphic power HEMT with a power density of 0.85 W/mm at 55 GHz
Author :
Saunier, Paul ; Matyi, R.J. ; Bradshaw, Keith
Author_Institution :
Texas Instrum. Inc., Dallas, TX, USA
Abstract :
The authors report the DC characteristics and RF performances of a 50*0.2- mu m/sup 2/ AlGaAs/InGaAs/GaAs pseudomorphic HEMT with a doped InGaAs channel. A transconductance as high as 760 mS/mm and a maximum current density of 800 mA/mm leads to a power density of 0.85 W/mm with 3.3-dB gain and 22.1% power-added efficiency at 55 GHz.<>
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; 3.3 dB; 55 GHz; AlGaAs-InGaAs-GaAs; DC characteristics; RF performances; double-heterojunction doped-channel pseudomorphic power HEMT; maximum current density; power density; power-added efficiency; transconductance; Current density; Gallium arsenide; HEMTs; Indium gallium arsenide; Millimeter wave propagation; Millimeter wave technology; PHEMTs; Radio frequency; Transconductance; Voltage;
Journal_Title :
Electron Device Letters, IEEE
