Title :
Noise model for the superconducting-base semiconductor-isolated transistor
Author :
Davidson, A. ; Frank, D.J.
Author_Institution :
IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA
fDate :
3/1/1989 12:00:00 AM
Abstract :
A simple noise model for bipolar transistors is adapted to the superconducting base semiconductor isolated transistor (SUBSIT). The model includes two statistically independent shot noise current sources in a lumped element model. For the case where the emitter of the SUBSIT is a normal metal, it is shown that the bipolar model carries over intact. For a SUBSIT with a superconducting emitter as well as base, the noise performance improves tremendously, due to the sharper turn-on characteristic. Noise temperatures in the milli-Kelvin regime are possible, and the energy resolution is likely to be quantum-limited
Keywords :
bipolar transistors; electron device noise; random noise; semiconductor device models; superconducting junction devices; SUBSIT; bipolar transistors; lumped element model; noise model; noise performance; noise temperature; quantum limited energy resolution; shot noise current sources; superconducting-base semiconductor-isolated transistor; turn-on characteristic; Acoustical engineering; Bandwidth; Bipolar transistors; Conductors; Electrons; Radiative recombination; Semiconductor device noise; Superconducting device noise; Superconductivity; Temperature;
Journal_Title :
Magnetics, IEEE Transactions on
