Noise model for the superconducting-base semiconductor-isolated transistor

Author

Davidson, A. ; Frank, D.J.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

25

Issue

2

fYear

1989

fDate

3/1/1989 12:00:00 AM

Firstpage

1278

Lastpage

1281

Abstract

A simple noise model for bipolar transistors is adapted to the superconducting base semiconductor isolated transistor (SUBSIT). The model includes two statistically independent shot noise current sources in a lumped element model. For the case where the emitter of the SUBSIT is a normal metal, it is shown that the bipolar model carries over intact. For a SUBSIT with a superconducting emitter as well as base, the noise performance improves tremendously, due to the sharper turn-on characteristic. Noise temperatures in the milli-Kelvin regime are possible, and the energy resolution is likely to be quantum-limited

Keywords

bipolar transistors; electron device noise; random noise; semiconductor device models; superconducting junction devices; SUBSIT; bipolar transistors; lumped element model; noise model; noise performance; noise temperature; quantum limited energy resolution; shot noise current sources; superconducting-base semiconductor-isolated transistor; turn-on characteristic; Acoustical engineering; Bandwidth; Bipolar transistors; Conductors; Electrons; Radiative recombination; Semiconductor device noise; Superconducting device noise; Superconductivity; Temperature;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.92529

Filename

92529