DocumentCode :
1495096
Title :
A High Load Current, Low-Noise, Area-Efficient, Full On-Chip Regulator for CMOS Pixel Sensors
Author :
Wang, Jia ; Gao, Deyuan ; Hu-Guo, Christine ; Jaaskelainen, Kimmo ; Hu, Yann
Author_Institution :
Sch. of Comput. Sci. & Technol., Northwestern Polytech. Univ., Xi´´an, China
Volume :
59
Issue :
3
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
582
Lastpage :
588
Abstract :
In order to solve the power distribution problem of detectors in high energy physics experiments, a full on-chip regulator is presented in this paper. It provides the analog power supply for CMOS pixel sensors. The maximum load current is 200 mA. The proposed regulator is stable in the full range of load current by introducing a zero and adapting the locations of poles and zeros. The compensation capacitance and resistance are significantly decreased to achieve low area. The chip area is only 0.044 mm2 excluding the bias and bandgap circuit, which can be shared with the other blocks in CMOS pixel sensors. The experimental results show that the output noise spectral density is less than 340 n VRMS/√Hz and 62 n VRMS/√Hz at 1 kHz and 100 kHz, respectively. The power consumption is 1.04 mW at the voltage of 3.3 V, when the load current is 200 mA.
Keywords :
CMOS integrated circuits; nuclear electronics; semiconductor counters; CMOS pixel sensors; analog power supply; area-efficient sensors; bandgap circuit; bias circuit; chip area; compensation capacitance; compensation resistance; current 200 mA; frequency 1 kHz; frequency 100 kHz; full on-chip regulator; high energy physics experiments; high load current; low-noise sensors; maximum load current; output noise spectral density; pole locations; power 1.04 mW; power consumption; power distribution problem; voltage 3.3 V; zero locations; Capacitance; Noise; Poles and zeros; Regulators; Sensors; Stability analysis; Transistors; CMOS pixel sensors; low noise; monolithic active pixel sensors; regulator;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/TNS.2012.2188817
Filename :
6183498
Link To Document :
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