The circuits of phase-quantum-tunneling device

Author

Yoshikawa, N. ; Sugahara, M. ; Murakami, T.

Author_Institution

Fac. of Eng., Yokohama Nat. Univ., Japan

Volume

25

Issue

2

fYear

1989

fDate

3/1/1989 12:00:00 AM

Firstpage

1286

Lastpage

1289

Abstract

The authors analyze the dynamics of logic gates and a discrete transmission line composed of PQT (phase-quantum-tunneling) junctions, each of which has characteristics completely dual to those of the Josephson junction. A PQT transistor which is represented as a series connection of two PQT junctions has a periodic threshold-voltage-charge relation with a period 2e. It is shown that it is possible to construct a PQT inverter and other PQT logic gates similar to the FET logic gates. The PQT logic gates have high performance (high switching speed and low power dissipation) even in high-temperature operation. Charge-soliton logic circuits can be formed using discrete PQT transmission lines. It is concluded that PQT devices are highly suitable for high speed electronics using high-T_c superconductors

Keywords

high-temperature superconductors; logic gates; superconducting junction devices; superconducting logic circuits; superconducting memory circuits; transmission lines; Josephson junction; PQT inverter; PQT transistor; charge soliton logic circuits; discrete transmission line; high speed electronics; high switching speed; high temperature superconductors; logic gates; low power dissipation; memory circuit; periodic threshold-voltage-charge relation; phase-quantum-tunneling device; series connection; Distributed parameter circuits; FETs; Josephson junctions; Logic circuits; Logic devices; Logic gates; Power dissipation; Power transmission lines; Pulse inverters; Superconducting transmission lines;

fLanguage

English

Journal_Title

Magnetics, IEEE Transactions on

Publisher

ieee

ISSN

0018-9464

Type

jour

DOI

10.1109/20.92530

Filename

92530