DocumentCode :
1495125
Title :
GaN Schottky Barrier Photodetectors With a Lattice-Matched 
Intermediate Layer
Author :
Huang, Z.D. ; Weng, W.Y. ; Chang, S.J. ; Hung, S.C. ; Chiu, C.J. ; Hsueh, T.J. ; Lai, W.C. ; Wu, S.L.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
11
Issue :
11
fYear :
2011
Firstpage :
2895
Lastpage :
2901
Abstract :
GaN Schottky barrier ultraviolet (UV) photodetectors (PDs) with a low-temperature Al0.82In0.18N intermediate layer were fabricated and characterized. With the intermediate layer, it was found that we could reduce the reverse leakage current by more than three orders of magnitude and achieve a 45 times larger UV-to-visible rejection ratio. Compared with the conventional GaN PDs, it was found that we could also reduce noise level and achieve a larger detectivity by inserting the lattice-matched AlInN intermediate layer.
Keywords :
III-V semiconductors; Schottky barriers; aluminium compounds; gallium compounds; indium compounds; leakage currents; photodetectors; ultraviolet detectors; wide band gap semiconductors; GaN-Al0.82In0.18N; Schottky barrier UV photodetector; Schottky barrier ultraviolet photodetector; UV-to-visible rejection ratio; lattice-matched intermediate layer; low-temperature intermediate layer; noise level reduction; reverse leakage current reduction; Current measurement; Gallium nitride; Noise; Noise measurement; Photodetectors; Schottky barriers; Wavelength measurement; AlInN; GaN; photodetectors;
fLanguage :
English
Journal_Title :
Sensors Journal, IEEE
Publisher :
ieee
ISSN :
1530-437X
Type :
jour
DOI :
10.1109/JSEN.2011.2143402
Filename :
5751200
Link To Document :
