Title :
Dose Rate and Static/Dynamic Bias Effects on CCDs Degradation
Author :
Martin, Emma ; Nuns, Thierry ; David, Jean-Pierre ; Gilard, Olivier ; Boutillier, Mathieu ; Penquer, Antoine
Author_Institution :
CNES, Onera, Toulouse, France
fDate :
6/1/2011 12:00:00 AM
Abstract :
Dark current evolution in Charge Coupled Devices (CCD) is experimentally studied with Co-60 and proton irradiations. Linear CCDs are irradiated in various static and dynamic bias conditions. Annealing effects are discussed and on-ground data are compared to in-flight data. Presented results on ionization-induced dark current increase in CCDs have demonstrated the impact of the sensor operational conditions and dose rate, revealing an ELDRS-like effect.
Keywords :
annealing; charge-coupled devices; cobalt; proton effects; CCD degradation; Co; Co-60; ELDRS-like effect; annealing; charge coupled devices; dark current evolution; dose rate; dynamic bias conditions; ionization-induced dark current; linear CCD; proton irradiations; static bias conditions; static/dynamic bias effects; Annealing; Charge coupled devices; Current measurement; Dark current; Degradation; Protons; Radiation effects; CCD; TID; dark current; displacement damage dose;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2132739
