DocumentCode :
1495164
Title :
Modeling Transmission Lines on Silicon in the Frequency and Time Domains from 
-Parameters
Author :
Sejas-García, Svetlana C. ; Torres-Torres, Reydezel ; Murphy-Arteaga, Roberto S.
Author_Institution :
Dept. of Electron., Inst. Nac. de Astrofis., Puebla, Mexico
Volume :
59
Issue :
6
fYear :
2012
fDate :
6/1/2012 12:00:00 AM
Firstpage :
1803
Lastpage :
1806
Abstract :
This brief presents the full characterization and modeling of uniform transmission lines on silicon. It includes the implementation of equivalent circuit models in both the frequency and time domains to perform accurate and causal simulations up to 30 GHz and for rise times in the order of picoseconds, respectively. These models can be directly implemented in SPICE-like simulators to obtain fast and physically based results when working on RFCMOS.
Keywords :
elemental semiconductors; equivalent circuits; high-frequency transmission lines; silicon; time-frequency analysis; RFCMOS; S-parameters; SPICE-like simulators; Si; equivalent circuit models; frequency domains; silicon; time domains; transmission line modeling; uniform transmission lines; Accuracy; Analytical models; Equivalent circuits; Frequency domain analysis; Impedance; Integrated circuit modeling; Silicon; CPW; skin effect; transmission-line loss;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2189774
Filename :
6183508
Link To Document :
