N-channel MOSFET model for the 60-300-K temperature range

Author

Gildenblat, Gennady Sh ; Huang, Cheng-Liang

Author_Institution

Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA

Volume

10

Issue

4

fYear

1991

fDate

4/1/1991 12:00:00 AM

Firstpage

512

Lastpage

518

Abstract

An engineering model of the short-channel NMOS transistor which is applicable to both room-temperature and cryogenic device operation is presented. The model incorporates the nonuniversal dependence of the effective channel mobility on the effective vertical field, which is ignored in room-temperature device models. Described also is a novel method to account for the bulk charge effect in the presence of drift velocity saturation, channel length modulation, charge sharing by the drain and source, and temperature dependence of the critical field. The proposed model is verified by comparison with experimental device characteristics obtained over a wide range of terminal voltages, temperatures, and channel lengths

Keywords

carrier mobility; cryogenics; insulated gate field effect transistors; semiconductor device models; 60 to 300 K; MOSFET model; bulk charge effect; channel length modulation; charge sharing; critical field; cryogenic device operation; drift velocity saturation; effective channel mobility; effective vertical field; engineering model; n-channel device; room-temperature; short-channel NMOS transistor; temperature dependence; Analytical models; Capacitance-voltage characteristics; Cryogenics; Electron mobility; FETs; Helium; MOSFET circuits; Temperature dependence; Temperature distribution; Voltage;

fLanguage

English

Journal_Title

Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on

Publisher

ieee

ISSN

0278-0070

Type

jour

DOI

10.1109/43.75634

Filename

75634