High-performance transimpedance formulation for MESFET- and HBT-based monolithic microwave integrated circuits

Author

Wilson, B. ; Drew, J.D.

Author_Institution

Dept. of Electr. Eng. & Electron., Univ. of Manchester Inst. of Sci. & Technol., UK

Volume

145

Issue

6

fYear

1998

fDate

12/1/1998 12:00:00 AM

Firstpage

429

Lastpage

436

Abstract

Analysis of amplifier and feedback combinations leads to the conclusion that the transimpedance configuration offers the opportunity of constant-bandwidth operation. As an example, a transimpedance amplifier based on shunt feedback around a current-gain amplifying element is described, which achieves gain-bandwidth independence at microwave frequencies. Full foundry layout simulation for circuits based on both MESFETs and HBTs indicates that an optical receiver front-end amplifier designed on these principles will exhibit gain-bandwidth independence through the GHz region, with very low sensitivity to photodiode capacitance

Keywords

MESFET integrated circuits; bipolar MMIC; feedback amplifiers; field effect MMIC; heterojunction bipolar transistors; optical receivers; HBT-based MMICs; MESFET-based MMICs; amplifier combinations; constant-bandwidth operation; current-gain amplifying element; foundry layout simulation; gain-bandwidth independence; optical receiver front-end amplifier; photodiode capacitance; shunt feedback; transimpedance formulation;

fLanguage

English

Journal_Title

Circuits, Devices and Systems, IEE Proceedings -

Publisher

iet

ISSN

1350-2409

Type

jour

DOI

10.1049/ip-cds:19982392

Filename

756341