• DocumentCode
    1495571
  • Title

    A thin-film waveguide photodetector using hydrogenated amorphous silicon

  • Author

    Howerton, Marta McWright ; Batchman, Ted E.

  • Author_Institution
    Dept. of Electr. Eng., Virginia Univ., Charlottesville, VA, USA
  • Volume
    6
  • Issue
    12
  • fYear
    1988
  • fDate
    12/1/1988 12:00:00 AM
  • Firstpage
    1854
  • Lastpage
    1860
  • Abstract
    Metal-silicon-metal cladding layers on dielectric waveguides exhibit coupling and absorption characteristics that make them useful as photodetectors for integrated optical applications. Multilayer computer-modeling techniques were applied to waveguide photodetectors in order to investigate field and power distributions, as well as the attenuation and phase response in the guiding region. A waveguide photodetector based on amorphous silicon was fabricated and demonstrated
  • Keywords
    dielectric waveguides; elemental semiconductors; integrated optics; metal-semiconductor-metal structures; photodetectors; silicon; absorption characteristics; amorphous Si; attenuation; dielectric waveguides; integrated optics; metal-insulator-metal cladding; multilayer computer-modeling; thin-film waveguide photodetector; Absorption; Amorphous materials; Application software; Dielectric thin films; Integrated optics; Optical attenuators; Optical coupling; Optical waveguides; Photodetectors; Transistors;
  • fLanguage
    English
  • Journal_Title
    Lightwave Technology, Journal of
  • Publisher
    ieee
  • ISSN
    0733-8724
  • Type

    jour

  • DOI
    10.1109/50.9255
  • Filename
    9255