Title :
A phenomenologically based transient SPICE model for digitally modulated RF performance characteristics of GaAs MESFETs
Author :
Leoni, Robert E., III ; Shirokov, Mikhail S. ; Bao, Jianwen ; Hwang, James C M
Author_Institution :
Dept. of Comput. Sci. & Electr. Eng., Lehigh Univ., Bethlehem, PA, USA
fDate :
6/1/2001 12:00:00 AM
Abstract :
A phenomenologically based transient SPICE model was developed for GaAs MESFETs. The model accounts for both trapping and detrapping effects; hence, it can simultaneously simulate low-frequency dispersion and gate-lag characteristics. This is different from conventional models, which can simulate either effect, but not both. The present model has been used to describe both surface- and substrate-related trapping phenomena in epitaxial or ion-implanted MESFETs. The model was experimentally verified in terms of pulsed I-V characteristics and pulsed AC response
Keywords :
III-V semiconductors; SPICE; Schottky gate field effect transistors; UHF field effect transistors; electron traps; gallium arsenide; hole traps; microwave field effect transistors; modulation; semiconductor device models; transient analysis; GaAs; GaAs MESFETs; LF dispersion characteristics; detrapping effects; digitally modulated RF performance characteristics; epitaxial MESFETs; gate-lag characteristics; ion-implanted MESFETs; low-frequency dispersion; phenomenologically based SPICE model; pulsed AC response; pulsed I-V characteristics; substrate-related trapping phenomena; surface-related trapping phenomena; transient SPICE model; trapping effects; Digital modulation; Dispersion; Gallium arsenide; MESFETs; Pulse amplifiers; Pulse measurements; Radio frequency; SPICE; Semiconductor process modeling; Substrates;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
