• DocumentCode
    1495767
  • Title

    Single-crystal ferroelectric microwave capacitor fabricated by separation by hydrogen implantation

  • Author

    Kub, F.J. ; Hobart, K.D. ; Pond, J.M. ; Kirchoefer, S.W.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    35
  • Issue
    6
  • fYear
    1999
  • fDate
    3/18/1999 12:00:00 AM
  • Firstpage
    477
  • Lastpage
    478
  • Abstract
    Microwave ferroelectric capacitors have been fabricated using separation by hydrogen ion implantation and transfer of a 500 nm thick single crystal SrTiO3 layer to an insulating glass substrate. The capacitor films are of high quality with a measured quality factor of nearly 100 at 10 GHz
  • Keywords
    Q-factor; ferroelectric capacitors; ferroelectric thin films; hydrogen; ion implantation; microwave devices; strontium compounds; thin film capacitors; 10 GHz; SrTiO3; high quality capacitor films; hydrogen ion implantation; insulating glass substrate; microwave ferroelectric capacitors; quality factor; separation by H implantation; single crystal SrTiO3 layer; single-crystal ferroelectric capacitor;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990354
  • Filename
    756403
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1495767