• DocumentCode
    1495878
  • Title

    Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates

  • Author

    Reinking, D. ; Kammler, M. ; Hoffmann, N. ; Horn-Von Hoegen, M. ; Hofmann, K.R.

  • Author_Institution
    Inst. fur Halbleitertechnol., Hannover Univ., Germany
  • Volume
    35
  • Issue
    6
  • fYear
    1999
  • fDate
    3/18/1999 12:00:00 AM
  • Firstpage
    503
  • Lastpage
    504
  • Abstract
    The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm2/Vs
  • Keywords
    CMOS integrated circuits; MOSFET; carrier mobility; elemental semiconductors; epitaxial growth; germanium; integrated circuit technology; semiconductor growth; silicon; CMOS compatible process; CMOSFETs; Ge; Ge p-channel MOSFETs; SME; Si; Si(111) substrates; channel drift mobilities; fabrication; high-mobility PMOSFETs; nonoptimised low temperature process; p-MOSFETs; relaxed Ge layers; surfactant mediated epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990349
  • Filename
    756421
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1495878