• DocumentCode
    1495890
  • Title

    Process capability of local oxidation of silicon isolation technology for sub-half micrometre custom IC applications

  • Author

    Song, J.

  • Author_Institution
    Dept. of Electron. Eng., Changwon Nat. Univ., Kyungnam, South Korea
  • Volume
    35
  • Issue
    6
  • fYear
    1999
  • fDate
    3/18/1999 12:00:00 AM
  • Firstpage
    505
  • Lastpage
    506
  • Abstract
    The process capability of conventional LOCOS isolation for sub-half micrometre custom IC applications is investigated in terms of field oxide thinning and bird´s beak encroachment. A 0.4 μm isolation space appears to be the practical limit when the appropriate film thickness combination is used
  • Keywords
    application specific integrated circuits; isolation technology; oxidation; silicon; 0.4 micron; LOCOS isolation; Si; bird beak encroachment; field oxide thinning; isolation technology; local oxidation; process capability; sub-half micron custom IC applications;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990350
  • Filename
    756423
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1495890