DocumentCode :
1495904
Title :
Sulphur passivation of dry-etched AlGaAs laser facets
Author :
Collot, P. ; Delalande, S. ; Olivier, J.
Author_Institution :
Lab. Central de Recherches, Thomson-CSF, Orsay, France
Volume :
35
Issue :
6
fYear :
1999
fDate :
3/18/1999 12:00:00 AM
Firstpage :
506
Lastpage :
508
Abstract :
The effects are reported of sulphur treatment in Na2S and (NH4)2S solutions for the passivation of AlGaAs laser facets, etched using Cl2-based chemically-assisted-ion-beam-etching. Compared to untreated lasers, a 37% average improvement in the catastrophic optical mirror damage threshold is measured on sulphur-treated broad-area CAIBE lasers
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; laser cavity resonators; optical fabrication; passivation; semiconductor lasers; sputter etching; sulphur; (NH4)2S; (NH4)2S solution; AlGaAs; AlGaAs laser facets; Cl2; Cl2-based chemically-assisted ion beam etching; Na2S; Na2S solution; S; S passivation; broad-area CAIBE lasers; catastrophic optical mirror damage threshold; dry-etched laser facets; sulphur treatment;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19990326
Filename :
756424
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1495904
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