Design of silicon hetero-interface photodetectors

Author

Wu, Weishu ; Hawkins, Aaron R. ; Bowers, John E.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

15

Issue

8

fYear

1997

fDate

8/1/1997 12:00:00 AM

Firstpage

1608

Lastpage

1615

Abstract

In a silicon hetero-interface photodetector, Si is used as the multiplication material to provide avalanche gain, while InGaAs is used as the absorption material. High quantum efficiency, high gain-bandwidth product, and low noise detection of wavelengths between 1.0 and 1.6 mm can be achieved in this way. We derive expressions for the frequency response for these detectors, present possible design variations, and analyze their performance. The effects of parasitics, transit time, and RC roll-off on frequency response are investigated and the 3-dB bandwidth and gain bandwidth product are calculated. Particular attention is paid to a 10 Gbit/s APD and we show that that a 3-dB bandwidth of 10 GHz and a gain-bandwidth product in excess of 400 GHz should be possible

Keywords

III-V semiconductors; avalanche photodiodes; elemental semiconductors; frequency response; gallium arsenide; indium compounds; optical design techniques; photodetectors; silicon; 1 to 1.6 mm; 10 GHz; 10 Gbit/s; InGaAs; RC roll-off; Si; absorption material; avalanche gain; design variations; frequency response; gain bandwidth product; high gain-bandwidth product; high quantum efficiency; low noise detection; multiplication material; parasitics; silicon hetero-interface photodetectors; transit time; Absorption; Bandwidth; Detectors; Frequency response; Indium gallium arsenide; Indium phosphide; Marine vehicles; Photodetectors; Semiconductor device noise; Silicon;

fLanguage

English

Journal_Title

Lightwave Technology, Journal of

Publisher

ieee

ISSN

0733-8724

Type

jour

DOI

10.1109/50.618397

Filename

618397