Title :
Optical generation of a megahertz-linewidth microwave signal using semiconductor lasers and a discriminator-aided phase-locked loop
Author :
Fan, Zhencan F. ; Dagenais, Mario
Author_Institution :
Dept. of Electr. Eng., Maryland Univ., College Park, MD, USA
fDate :
8/1/1997 12:00:00 AM
Abstract :
A discriminator-aided optical phase-locked loop (OPLL) with significantly enhanced frequency acquisition capability is presented. Its pull-in range is measured to be 300 MHz and can be easily extended further. Two grating-tuned external-cavity semiconductor lasers (ECSLs) were realized with more than 30-dB side-mode suppression ratio. These two lasers were allowed to beat on a fast detector and were offset phase locked. The generated microwave signal was found to be a replica of the reference RF signal close to the carrier, The noise level was measured to be -70 dBc/Hz close to the carrier and less than -100 dBc/Hz at 4 MHz away and beyond from the carrier. The total phase variance is 0.11 rad 2 over a 500-MHz bandwidth. The linewidth full width at half maximum (FWHM) of the locked signal was directly measured to be of order 1 mHz
Keywords :
discriminators; laser tuning; microwave generation; optical phase locked loops; semiconductor lasers; 500 MHz; discriminator-aided phase-locked loop; frequency acquisition capability; grating-tuned external-cavity semiconductor lasers; linewidth full width at half maximum; megahertz-linewidth microwave signal; noise level; offset phase locked lasers; optical generation; pull-in range; side-mode suppression ratio; total phase variance; Frequency; Gratings; Laser noise; Masers; Microwave generation; Phase detection; Phase locked loops; RF signals; Semiconductor lasers; Signal generators;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on