Title :
Interfacial Elastic Dipoles: A New EOT Shifting Mechanism in HKMG Devices
Author :
Liang, Qingqing ; Xu, Qiuxia ; Zhu, Huilong ; Zhong, Huicai ; Li, Junfeng ; Zhao, Chao ; Chen, Dapeng ; Ye, Tianchun
Author_Institution :
Inst. of Microelectron., Beijing, China
fDate :
6/1/2012 12:00:00 AM
Abstract :
A new effective-oxide-thickness (EOT) shifting mechanism caused by the interfacial elastic dipoles is analyzed. The EOT can shift without changing the physical thickness of each dielectric layer. This phenomenon is first observed in the experiments of high-k metal-gate device optimization. Detailed studies and ab initio simulations show that this dipole-EOT correlation generally exists in any dielectric interfaces and should be carefully scrutinized in process development.
Keywords :
VLSI; optimisation; EOT shifting mechanism; HKMG devices; dipole-EOT correlation; effective-oxide-thickness shifting mechanism; high-k metal-gate device optimization; interfacial elastic dipoles; Atomic clocks; Dielectrics; Hafnium compounds; High K dielectric materials; Logic gates; Silicon; Dipoles; Vfb; effective oxide thickness (EOT); high- $k$ metal gate (HKMG);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2190033
