DocumentCode
1496586
Title
In0.53Ga0.47As/In0.52Al0.48 As separate absorption, charge, and multiplication layer long wavelength avalanche photodiode
Author
Dries, J.C. ; Thomson, K.J. ; Forrest, S.R.
Author_Institution
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Volume
35
Issue
4
fYear
1999
fDate
2/18/1999 12:00:00 AM
Firstpage
334
Lastpage
335
Abstract
The authors demonstrate the use of In0.52Al0.48 As as the gain material in a separate absorption, charge, and multiplication layer avalanche photodiode (APD) with sensitivity to 0.9-1.7 μm wavelength light. A hole to electron ionisation rate ratio of k=0.23 is observed, representing a significant improvement over the 1/k=0.4 characteristic of InP/In0.53Ga0.47As avalanche photodiodes. Primary dark currents of ~10 nA and gains approaching 100 for 100 μm diameter mesa devices are observed. A 6 dB sensitivity advantage is measured for an APD receiver over an In0.53Ga0.47As p-i-n detector receiver at a wavelength of 1.55 μm, a bit rate of 1.5 Gbit/s, and 10-9 bit error rate
Keywords
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; indium compounds; optical receivers; sensitivity; 0.9 to 1.7 micron; 1.5 Gbit/s; 1.55 micron; 10 nA; 100 micron; APD receiver; BER; In0.53Ga0.47As-In0.52Al0.48 As; InAlAs gain material; absorption layer; avalanche photodiode; bit error rate; charge layer; ionisation rate ratio; long wavelength APD; multiplication layer; sensitivity; separate layer configuration;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990188
Filename
756731
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